 |
công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
|
công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
DMN2104L bảng dữ liệu(PDF) 1 Page - Diodes Incorporated |
|
|
|||||||||||||||||||||||||||||
DMN2104L bảng dữ liệu(HTML) 1 Page - Diodes Incorporated |
|
|
1 / 4 page  DMN2104L Document number: DS31560 Rev. 1 - 2 1 of 4 www.diodes.com October 2008 © Diodes Incorporated DMN2104L N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • 53m Ω @VGS = 4.5V • 104m Ω @VGS = 2.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SOT-23 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminal Connections: See Diagram • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.008 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Drain Current (Note 3) ID 4.3 A Pulsed Drain Current (Note 4) IDM 15 A Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 3) PD 1.4 W Thermal Resistance, Junction to Ambient (Note 3) RθJA 90 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS 20 ⎯ ⎯ V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 500 nA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±12V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) 0.45 ⎯ 1.4 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) ⎯ 42 84 53 104 m Ω VGS = 4.5V, ID = 4.2A VGS = 2.5V, ID = 3.1A Forward Transfer Admittance |Yfs| ⎯ 6.6 ⎯ S VDS =5V, ID = 4.2A Diode Forward Voltage (Note 5) VSD ⎯ 0.7 1.2 V VGS = 0V, IS = 1.0A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 325 ⎯ pF VDS = 10V, VGS = 0V f = 1.0MHz Output Capacitance Coss ⎯ 92 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 70 ⎯ pF Notes: 1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, on 2oz Copper pad layout with RθJA = 90°C/W. 4. Repetitive rating, pulse width limited by junction temperature. 5. Short duration pulse test used to minimize self-heating effect. SOT-23 TOP VIEW Equivalent Circuit TOP VIEW D G S Source Gate Drain Please click here to visit our online spice models database. |
Số phần tương tự - DMN2104L |
|
Mô tả tương tự - DMN2104L |
|
|
|
Link URL |
| Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không? [ DONATE ] |
Alldatasheet là | Quảng cáo | Liên lạc với chúng tôi | Chính sách bảo mật | Liên kết đến bảng dữ liệu | Trao đổi link | Tìm kiếm theo nhà sản xuất All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Vietnamese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
