DP0150ADJ datasheet(1/4 Pages) DIODES

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DP0150ADJ / DP0150BDJ

Document number: DS31485 Rev. 3 - 2

1 of 4

www.diodes.com

April 2009

DP0150ADJ / DP0150BDJ

DUAL PNP SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Planar Die Construction

•

Ideally Suited for Automated Assembly Processes

•

Lead Free By Design/RoHS Compliant (Note 1)

•

"Green" Device (Note 2)

•

Ultra Small Package

Mechanical Data

•

Case: SOT-963

•

Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020D

•

Terminals: Finish

⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

•

Marking Information: See Page 3

•

Ordering Information: See Page 3

•

Weight: 0.0027 grams (approximate)

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

VCEO

-50

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current - Continuous

IC

-100

mA

Base Current

IB

-30

mA

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 3)

PD

300

mW

Thermal Resistance, Junction to Ambient (Note 3)

RθJA

417

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

V(BR)CBO

-50

—

V

IC = -10μA, IE = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

-50

—

V

IC = -1mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

-5

—

V

IE = -10μA, IC = 0

Collector Cut-Off Current

ICBO

—

-0.1

μA

VCB = -50V, IE = 0

Emitter Cut-Off Current

IEBO

—

-0.1

μA

VEB = -5V, IC = 0

ON CHARACTERISTICS (Note 4)

Collector-Emitter Saturation Voltage

VCE(SAT)

—

-0.15

-0.3

V

IC = -100mA, IB = -10mA

DC Current Gain

DP0150ADJ

DP0150BDJ

hFE

120

—

240

—

VCE = -6V, IC = -2mA

200

—

400

SMALL SIGNAL CHARACTERISTICS

Transition Frequency

fT

80

—

MHz

VCE = -10V, IE = 1mA

f = 30MHz

Output Capactiance

Cob

—

1.6

—

pF

VCB = -10V, IE = 0,

f = 1MHz

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB with minimum recommended pad layout.

4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle

≤2%

Device Schematic

Top View

SOT-963

6

Q1

Q2

5

4

3

1

2

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