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DMC3018LSD bảng dữ liệu(PDF) 2 Page - Diodes Incorporated |
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DMC3018LSD bảng dữ liệu(HTML) 2 Page - Diodes Incorporated |
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2 / 6 page  DMC3018LSD Document number: DS31310 Rev. 7 - 2 2 of 6 www.diodes.com October 2008 © Diodes Incorporated DMC3018LSD Electrical Characteristics N-CHANNEL @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS 30 ⎯ ⎯ V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 μA VDS = 24V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ± 100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) 1 1.9 2.1 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯ 18 29 20 32 m Ω VGS = 10V, ID = 6.9A VGS = 4.5V, ID = 5.0A Forward Transfer Admittance |Yfs| ⎯ 10 ⎯ S VDS = 5V, ID = 6.9A Diode Forward Voltage (Note 5) VSD 0.5 ⎯ 1.2 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 631 ⎯ pF Output Capacitance Coss ⎯ 147 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 99 ⎯ pF VDS = 15V, VGS = 0V, f =1.0MHz Gate Resistance RG ⎯ 0.9 ⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz SWITCHING CHARACTERISTICS Total Gate Charge Qg ⎯ 5.9 12.4 ⎯ VDS = 15V, VGS = 4.5V, ID = 7A VDS = 15V, VGS = 10V, ID = 9A Gate-Source Charge Qgs ⎯ 1.8 ⎯ VDS = 15V, VGS = 10V, ID = 9A Gate-Drain Charge Qgd ⎯ 3.4 ⎯ nC VDS = 15V, VGS = 10V, ID = 9A Electrical Characteristics P-CHANNEL @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS -30 ⎯ ⎯ V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1.0 μA VDS = -24V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ± 100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) -1 -1.7 -2.1 V VDS = VGS, ID = -250μA ⎯ 35 45 VGS = -10V, ID = -6A Static Drain-Source On-Resistance RDS (ON) ⎯ 56 65 m Ω VGS = -4.5V, ID = -5.0A Forward Transfer Admittance |Yfs| ⎯ 8.2 ⎯ S VDS =-5V, ID = -6A Diode Forward Voltage (Note 5) VSD -0.5 ⎯ -1.2 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 722 ⎯ pF Output Capacitance Coss ⎯ 114 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 92 ⎯ pF VDS = -15V, VGS = 0V, f = 1.0MHz Gate Resistance RG ⎯ 1.9 ⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz SWITCHING CHARACTERISTICS Total Gate Charge Qg ⎯ 7.0 13.7 ⎯ VDS = -15V, VGS = -4.5V, ID = -6A VDS = -15V, VGS = -10V, ID = -6A Gate-Source Charge Qgs ⎯ 1.7 ⎯ VDS = -15V, VGS = -4.5V, ID = -6A Gate-Drain Charge Qgd ⎯ 4.1 ⎯ nC VDS = -15V, VGS = -4.5V, ID = -6A Notes: 5. Short duration pulse test used to minimize self-heating effect. |
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