MMBTA28 datasheet(1/3 Pages) DIODES

tên linh kiện	MMBTA28

Giải thích chi tiết về linh kiện	NPN SURFACE MOUNT DARLINGTON TRANSISTOR

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MMBTA28

NPN SURFACE MOUNT DARLINGTON TRANSISTOR

Features

•

Epitaxial Planar Die Construction

•

Ideal for Low Power Amplification and Switching

•

High Current Gain

•

Lead, Halogen and Antimony Free, RoHS Compliant

"Green" Device (Notes 3 and 4)

Mechanical Data

•

Case: SOT-23

•

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020D

•

Terminal Connections: See Diagram

•

Terminals: Solderable per MIL-STD-202, Method 208

•

Lead Free Plating (Matte Tin Finish annealed over Alloy

42 leadframe).

•

Marking Information: See Page 3

•

Ordering Information: See Page 3

•

Weight: 0.008 grams (approximate)

SOT-23

Dim

Min

Max

A

0.37

0.51

B

1.20

1.40

C

2.30

2.50

D

0.89

1.03

E

0.45

0.60

G

1.78

2.05

H

2.80

3.00

J

0.013

0.10

K

0.903

1.10

L

0.45

0.61

M

0.085

0.180

α

0

°

8

°

All Dimensions in mm

C

B

E

A

E

J

L

TOP VIEW

M

B

C

H

G

D

K

C

B

E

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

80

V

Collector-Emitter Voltage

VCEO

80

V

Emitter-Base Voltage

VEBO

12

V

Collector Current - Continuous

IC

500

mA

Power Dissipation (Note 1)

PD

300

mW

Thermal Resistance, Junction to Ambient (Note 1)

RθJA

417

°C/W

Operating and Storage and Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

V(BR)CBO

80

⎯

V

IC = 100μA IE = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

12

⎯

V

IE = 100μA IC = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

80

⎯

V

IC = 100μA IB = 0

ICBO

⎯

100

nA

VCB = 60V, IE = 0

Collector Cutoff Current

ICES

⎯

500

nA

VCE = 10V

Emitter Cutoff Current

IEBO

⎯

100

nA

VEB = 10V, IC = 0

ON CHARACTERISTICS (Note 2)

DC Current Gain

hFE

10,000

⎯

IC = 10mA, VCE = 5.0V

IC = 100mA, VCE = 5.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

1.5

V

IC = 100mA, IB = 100μA

Base-Emitter Saturation Voltage

VBE(SAT)

⎯

2.0

V

IC = 100mA, VCE = 5.0V

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Cobo

8.0 Typical

pF

VCB = 10V, f = 1.0MHz, IE = 0

Input Capacitance

Cibo

15 Typical

pF

VEB = 0.5V, f = 1.0MHz, IC = 0

Current Gain-Bandwidth Product

fT

125

⎯

MHz

VCE = 5.0V, IC = 10mA,

f = 100MHz

Notes:

1. Device mounted on FR-4 PCB, 1.6x1.6x0.06 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001 which can be found on

our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration pulse test used to minimize self-heating effect.

3. No purposefully added lead. Halogen and Antimony Free.

4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

DS30367 Rev. 9 - 2

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MMBTA28

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