MMBTA63 datasheet(1/3 Pages) DIODES

tên linh kiện	MMBTA63

Giải thích chi tiết về linh kiện	PNP SURFACE MOUNT DARLINGTON TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

nhà sản xuất	DIODES [Diodes Incorporated]

Trang chủ	http://www.diodes.com

Logo

1 / 3 page

MMBTA63 / MMBTA64

PNP SURFACE MOUNT DARLINGTON TRANSISTOR

Features

•

Epitaxial Planar Die Construction

•

Complementary NPN Types Available

(MMBTA13 /MMBTA14)

•

Ideal for Low Power Amplification and Switching

•

High Current Gain

•

Lead, Halogen and Antimony Free, RoHS Compliant

"Green" Device (Notes 3 and 4)

Mechanical Data

•

Case: SOT-23

•

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020D

•

Terminals: Solderable per MIL-STD-202, Method 208

•

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe). Terminal Connections: See Diagram

•

MMBTA63 Marking K2E, K3E See Page 3

•

MMBTA64 Marking K3E See Page 3

•

Ordering & Date Code Information: See Page 3

•

Weight: 0.008 grams (approximate)

A

E

J

L

TOP VIEW

M

DS30055 Rev. 8 - 2

1 of 3

www.diodes.com

MMBTA63 / MMBTA64

SOT-23

Dim

Min

Max

A

0.37

0.51

B

1.20

1.40

C

2.30

2.50

D

0.89

1.03

E

0.45

0.60

G

1.78

2.05

H

2.80

3.00

J

0.013

0.10

K

0.903

1.10

L

0.45

0.61

M

0.085

0.180

α

0

°

8

°

All Dimensions in mm

B

C

BE

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

-30

V

Collector-Emitter Voltage

VCEO

-30

V

Emitter-Base Voltage

VEBO

-10

V

Collector Current - Continuous

(Note 1)

IC

-500

mA

Power Dissipation

(Note 1)

PD

300

mW

Thermal Resistance, Junction to Ambient

(Note 1)

RθJA

417

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Emitter Breakdown Voltage

V(BR)CEO

-30

⎯

V

IC = -100μA VBE = 0V

Collector Cutoff Current

ICBO

⎯

-100

nA

VCB = -30V, IE = 0

Emitter Cutoff Current

IEBO

⎯

-100

nA

VEB = -10V, IC = 0

ON CHARACTERISTICS (Note 2)

DC Current Gain

MMBTA63

MMBTA64

MMBTA63

MMBTA64

hFE

5,000

10,000

20,000

⎯

IC = -10mA, VCE = -5.0V

IC = -100mA, VCE = -5.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

-1.5

V

IC = -100mA, IB = -100μA

Base-Emitter Saturation Voltage

VBE(SAT)

⎯

-2.0

V

IC = -100mA, VCE = -5.0V

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

fT

125

⎯

MHz

VCE = -5.0V, IC = -10mA,

f = 100MHz

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,

which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration pulse test used to minimize self-heating effect

3. No purposefully added lead. Halogen and Antimony Free.

4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

H

G

D

K

E

B

C

Please click here to visit our online spice models database.

Số phần tương tự - MMBTA63

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Transys Electronics	MMBTA63	132Kb / 1P	PNP SURFACE MOUNT DARLINGTON TRANSISTOR
Samsung semiconductor	MMBTA63	64Kb / 2P	PNP (DARLINGTON TRANSISTOR)
Fairchild Semiconductor	MMBTA63	29Kb / 2P	PNP Darlington Transistor
Diodes Incorporated	MMBTA63	46Kb / 2P	PNP SURFACE MOUNT DARLINGTON TRANSISTOR DS30055 Rev. 3 - 2
KEC(Korea Electronics)	MMBTA63	184Kb / 2P	EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE DARLING TON TRANSISTOR)

More results

Mô tả tương tự - MMBTA63

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Transys Electronics	MMBTA63	132Kb / 1P	PNP SURFACE MOUNT DARLINGTON TRANSISTOR
Diodes Incorporated	MMBTA63	46Kb / 2P	PNP SURFACE MOUNT DARLINGTON TRANSISTOR DS30055 Rev. 3 - 2
Central Semiconductor C...	CXTA62	69Kb / 2P	SURFACE MOUNT PNP SILICON DARLINGTON TRANSISTOR
Central Semiconductor C...	CZTA77	73Kb / 2P	SURFACE MOUNT PNP SILICON DARLINGTON TRANSISTOR
Diodes Incorporated	MMBTA63	79Kb / 3P	PNP SURFACE MOUNT DARLINGTON TRANSISTOR DS30055 Rev. 7 - 2
	MMSTA63	80Kb / 4P	PNP SURFACE MOUNT DARLINGTON TRANSISTOR DS30159 Rev. 8 - 2
	MMSTA63	113Kb / 3P	PNP SURFACE MOUNT DARLINGTON TRANSISTOR Rev. 9 - 2
	MMBTA63	110Kb / 3P	PNP SURFACE MOUNT DARLINGTON TRANSISTOR Rev 8
	MMSTA63	113Kb / 3P	PNP SURFACE MOUNT DARLINGTON TRANSISTOR Rev 9
Guangdong Kexin Industr...	MMSTA63	142Kb / 3P	PNP Surface Mount Darlington Transistor

More results

MMBTA63 bảng dữ liệu(PDF) 1 Page - Diodes Incorporated

MMBTA63 bảng dữ liệu(HTML) 1 Page - Diodes Incorporated

Số phần tương tự - MMBTA63

Mô tả tương tự - MMBTA63

Html Pages

1 2 3

bảng dữ liệu tải về

Link URL