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MMBTA06 bảng dữ liệu(PDF) 1 Page - Diodes Incorporated

tên linh kiện MMBTA06
Giải thích chi tiết về linh kiện  NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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MMBTA06 bảng dữ liệu(HTML) 1 Page - Diodes Incorporated

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MMBTA05 / MMBTA06
Document number: DS30037 Rev. 12 - 2
1 of 4
www.diodes.com
April 2009
© Diodes Incorporated
MMBTA05 / MMBTA06
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
Epitaxial Planar Die Construction
•
Complementary PNP Type Available (MMBTA55 / MMBTA56)
•
Ideal for Low Power Amplification and Switching
•
Lead, Halogen and Antimony Free, RoHS Compliant (Note 3)
•
"Green" Device (Note 4)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
Case: SOT-23
•
Case Material: Molded Plastic, “Green” Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminal Connections: See Diagram
•
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
•
Marking Information: See Page 3
•
Ordering Information: See Page 3
•
Weight: 0.008 grams (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
MMBTA05
MMBTA06
Unit
Collector-Base Voltage
VCBO
60
80
V
Collector-Emitter Voltage
VCEO
60
80
V
Emitter-Base Voltage
VEBO
4.0
V
Collector Current - Continuous (Note 1)
IC
500
mA
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 1)
PD
300
mW
Thermal Resistance, Junction to Ambient (Note 1)
RθJA
417
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
MMBTA05
MMBTA06
V(BR)CBO
60
80
⎯
V
IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage
MMBTA05
MMBTA06
V(BR)CEO
60
80
⎯
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
4.0
⎯
V
IE = 100μA, IC = 0
Collector Cutoff Current
MMBTA05
MMBTA06
ICBO
⎯
100
nA
VCB = 60V, IE = 0
VCB = 80V, IE = 0
Collector Cutoff Current
MMBTA05
MMBTA06
ICES
⎯
100
nA
VCE = 60V, IBO = 0V
VCE = 80V, IBO = 0V
ON CHARACTERISTICS (Note 2)
DC Current Gain
hFE
100
⎯
⎯
IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
0.25
V
IC = 100mA, IB = 10mA
Base-Emitter Saturation Voltage
VBE(SAT)
⎯
1.2
V
IC = 100mA, VCE = 1.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
fT
100
⎯
MHz
VCE = 2.0V, IC = 10mA, f = 100MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
Top View
Device Schematic
E
B
C
3
12
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