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DMP4050SSD bảng dữ liệu(PDF) 4 Page - Diodes Incorporated

tên linh kiện DMP4050SSD
Giải thích chi tiết về linh kiện  40V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
PDF  8 Pages
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nhà sản xuất  DIODES [Diodes Incorporated]
Trang chủ  http://www.diodes.com
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DMP4050SSD bảng dữ liệu(HTML) 4 Page - Diodes Incorporated

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DMP4050SSD
Document Number DS32107 Rev 2 - 2
4 of 8
www.diodes.com
November 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMP4050SSD
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
-40
⎯
⎯
V
ID = -250μA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
-0.5
μA
VDS = -40V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
⎯
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
-1.0
⎯
-3.0
V
ID = -250μA, VDS = VGS
Static Drain-Source On-Resistance (Note 9)
RDS (ON)
⎯
0.038
0.050
Ω
VGS = -10V, ID = -6A
0.055
0.079
VGS = -4.5V, ID = -5A
Forward Transconductance (Notes 9 & 10)
gfs
⎯
14
⎯
S
VDS = -15V, ID = -6A
Diode Forward Voltage (Note 9)
VSD
⎯
-0.86
-1.2
V
IS = -6A, VGS = 0V
Reverse recovery time (Note 10)
trr
18
⎯
ns
IS = -2A, di/dt = 100A/μs
Reverse recovery charge (Note 10)
Qrr
⎯
12.7
⎯
nC
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Ciss
⎯
674
⎯
pF
VDS = -20V, VGS = 0V
f = 1MHz
Output Capacitance
Coss
⎯
115
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
67.7
⎯
pF
Total Gate Charge (Note 11)
Qg
⎯
6.9
⎯
nC
VGS = -4.5V
VDS = -20V
ID = -6A
Total Gate Charge (Note 11)
Qg
⎯
13.9
⎯
nC
VGS = -10V
Gate-Source Charge (Note 11)
Qgs
⎯
2
⎯
nC
Gate-Drain Charge (Note 11)
Qgd
⎯
3.4
⎯
nC
Turn-On Delay Time (Note 11)
tD(on)
⎯
1.9
⎯
ns
VDD = -20V, VGS = -10V
ID = -1A, RG ≅ 6.0Ω
Turn-On Rise Time (Note 11)
tr
⎯
3.1
⎯
ns
Turn-Off Delay Time (Note 11)
tD(off)
⎯
31.5
⎯
ns
Turn-Off Fall Time (Note 11)
tf
⎯
12.6
⎯
ns
Notes:
9.
Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.



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