DMN4027SSS

Document Number DS32103 Rev 1 - 2

4 of 8

www.diodes.com

March 2010

© Diodes Incorporated

A Product Line of

Diodes Incorporated

DMN4027SSS

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

40

⎯

⎯

V

Zero Gate Voltage Drain Current

⎯

⎯

0.5

μA

Gate-Source Leakage

⎯

⎯

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

1.0

⎯

3.0

V

Static Drain-Source On-Resistance (Note 7)

⎯

0.017

0.027

Ω

0.031

0.047

Forward Transconductance (Notes 7 & 8)

⎯

22.8

⎯

S

Diode Forward Voltage (Note 7)

⎯

0.85

1.1

V

Reverse recovery time (Note 8)

12.2

⎯

ns

Reverse recovery charge (Note 8)

⎯

5.4

⎯

nC

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

⎯

604

⎯

pF

f= 1MHz

Output Capacitance

⎯

106

⎯

pF

Reverse Transfer Capacitance

⎯

59.6

⎯

pF

Total Gate Charge (Note 9)

⎯

6.3

⎯

nC

Total Gate Charge (Note 9)

⎯

12.9

⎯

nC

Gate-Source Charge (Note 9)

⎯

2.4

⎯

nC

Gate-Drain Charge (Note 9)

⎯

3

⎯

nC

Turn-On Delay Time (Note 9)

⎯

3.1

⎯

ns

Turn-On Rise Time (Note 9)

⎯

3.1

⎯

ns

Turn-Off Delay Time (Note 9)

⎯

15.4

⎯

ns

Turn-Off Fall Time (Note 9)

⎯

7.5

⎯

ns

Notes:

7. Measured under pulsed conditions. Pulse width

≤ 300μs; duty cycle ≤ 2%

8. For design aid only, not subject to production testing.

9. Switching characteristics are independent of operating junction temperatures.