ZXMS6006DT8

Document number: DS35143 Rev. 1 - 2

3 of 9

www.diodes.com

December 2010

© Diodes Incorporated

ZXMS6006DT8

A Product Line of

Diodes Incorporated

IntelliFET

Characteristic

Symbol

Value

Units

Continuous Drain-Source Voltage

60

V

Drain-Source Voltage For Short Circuit Protection

16

V

Continuous Input Voltage

-0.5 ... +6

V

Continuous Input Current @-0.2V

No limit

mA

11

A

13

A

Continuous Source Current (Body Diode) (Note 4)

2

A

Pulsed Source Current (Body Diode)

12

A

Unclamped Single Pulse Inductive Energy,

210

mJ

Electrostatic Discharge (Human Body Model)

4000

V

Charged Device Model

1000

V

Characteristic

Symbol

Value

Units

Linear Derating Factor

1.16

9.28

W

mW/

°C

Linear Derating Factor

1.67

13.3

W

mW/

°C

Linear Derating Factor

2.13

17

W

mW/

°C

Thermal Resistance, Junction to Ambient (Notes 4 & 7)

108

°C/W

Thermal Resistance, Junction to Ambient (Notes 4 & 8)

75

°C/W

Thermal Resistance, Junction to Case (Notes 5 & 7)

58.7

°C/W

Thermal Resistance, Junction to Case (Note 9)

26.5

°C/W

Operating Temperature Range

-40 to +150

°C

Storage Temperature Range

-55 to +150

°C

Notes:

4. For a dual device surface mounted on a 25mm x 25mm single sided 1oz weight copper split down the middle on 1.6mm FR4 board, in still air conditions.

5. For a dual device surface mounted on FR4 PCB measured at t

≤ 10sec

6. Repetitive rating25mm x 25mm FR4 PCB, D = 0.02, Pulse width = 300µs – pulse width limited by junction temperature. Refer to transient thermal

impedance graph.

7. For a dual device with one active die.

8. For a dual device with 2 active die running at equal power.

9. Thermal resistance from junction to the mounting surface of the drain pin.