ZXMS6006DG

Document number: DS35142 Rev. 1 - 2

4 of 9

www.diodes.com

December 2010

© Diodes Incorporated

ZXMS6006DG

A Product Line of

Diodes Incorporated

IntelliFET

Recommended Operating Conditions

The ZXMS6006DG is optimized for use with µC operating from 3.3V and 5V supplies.

Characteristic

Symbol

Min

Max

Unit

Input Voltage Range

0

5.5

V

Ambient Temperature Range

-40

125

°C

High Level Input Voltage for MOSFET to be on

3

5.5

V

Low level input voltage for MOSFET to be off

0

0.7

V

Peripheral Supply Voltage (voltage to which load is referred)

0

16

V

Thermal Characteristics

110

10m

100m

1

10

Limit of s/c protection

15X15X1.6 mm

Single 1oz FR4

Limited by Over-Current Protection

Single Pulse

T

amb

=25°C

Limited

by R

DS(on)

1ms

10ms

100ms

1s

DC

Safe Operating Area

V

DS

Drain-Source Voltage (V)

0

25

50

75

100

125

150

0.0

0.5

1.0

1.5

2.0

2.5

3.0

15X15X1.6 mm

Single 1oz FR4

T

amb

=25°C

50X50X1.6 mm

Single 2oz FR4

15X15X1.6 mm

Single 1oz FR4

Derating Curve

Temperature (°C)

100µ

1m

10m 100m

1

10

100

1k

0

10

20

30

40

50

60

70

80

90

100

Transient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Pulse Width (s)

100µ

1m

10m 100m

1

10

100

1k

1

10

100

Single Pulse

T

amb

=25°C

15X15X1.6 mm

Single 1oz FR4

Pulse Power Dissipation

Pulse Width (s)