IC-MFN datasheet(2/13 Pages) ICHAUS

2 / 13 page

iC-MFN

8-FOLD FAIL-SAFE N-FET DRIVER

Rev A2, Page 2/13

DESCRIPTION

iC-MFN is a monolithically integrated, 8-channel level

adjustment device which drives N-channel FETs.

The internal circuit blocks have been designed in

such a way that with single errors, such as open

pins (VB, VBR, GND, GNDR) or the short-circuiting

of two outputs, iC-MFN’s output stages switch to a

predeﬁned, safe low state. Externally connected N-

channel FET are thus shut down safely in the event

of a single error.

The inputs of the eight channels consist of a Schmitt

trigger with a pull-down current source and are com-

patible with TTL and CMOS levels and are voltage-

proof up to 40 V. The eight channels have a current-

limited push-pull output stage and a pull-down resis-

tor at the output. The hi-level at one of the inputs

EN5, EN10 or ENFS deﬁnes the output hi-level and

enables the outputs. The output hi-level is disabled

with the lo-level at all inputs EN5, EN10 and ENFS or

with the hi-level at more than one input.

iC-MFN monitors the supply voltage at VB and VBR

pin and the voltages at the two ground pins GND and

GNDR. Both power supply pins VB and VBR and

both pins GND and GNDR must be connected to-

gether externally in order to guarantee the safe low

state of the output stages in the event of error.

Should the supply voltage at VB undershoot a prede-

ﬁned threshold, the voltage monitor causes the out-

puts to be actively tied to GND via the lowside tran-

sistors. If the ground potential ceases to be applied

to GND, the outputs are tied to GNDR by pull-down

resistors.

If the connection between the ground potential and

the GND pin is disrupted, the highside and lowside

transistors of the output stages are shut down and

the outputs tied to GNDR via the pull-down resistors.

If on the other hand the connection between ground

potential and the GNDR pin is disrupted, only the

output stage highside transistors are shut down; the

outputs are then actively tied to GND via the lowside

transistors.

Pull-down currents provide the safe lo-level at open

inputs IN1. . . 8, EN5, EN10 and ENFS. The pull-

down currents have two stages in order to minimize

power dissipation with enhanced noise immunity.

The status of the device is indicated with the Open-

Drain pin NOK and can be used for system diagnos-

tics.

Temperature monitoring protects the device from too

high power dissipation.

The device is protected against destruction by ESD.

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