STPS80170C datasheet(3/6 Pages) STMICROELECTRONICS

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STPS80170C

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Figure 1: Average forward power dissipation

versus average forward current (per diode)

Figure 2: Average forward current versus

ambient temperature (

δ = 0.5, per diode)

Figure

Normalized

avalanche

power

derating versus pulse duration

Figure

Normalized

avalanche

power

derating versus junction temperature

Figure 5: Non repetitive surge peak forward

current versus overload duration (maximum

values, per diode)

Figure

Relative

variation

thermal

impedance junction to case versus pulse

duration

F(AV)(W)

d=0.05

d=0.1

d=0.2

d=0.5

d=1

d=t /T

IF(AV)(A)

100

125

150

175

F(AV)(A)

th(j-a)=15°C/W

d=t /T

th(j-a)=Rth(j-c)

Tamb(°C)

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(t )

(25°C)

ARM p

ARM

100

150

200

250

300

350

400

450

500

1.E-03

1.E-02

1.E-01

1.E+00

M(A)

C=50°C

C=75°C

C=125°C

d =0.5

t(s)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

th(j-c)/Rth(j-c)

d=0.1

d=0.2

d=0.5

Single pulse

d=T /T

tP(s)

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