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PD84008L-E bảng dữ liệu(PDF) 1 Page - STMicroelectronics |
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PD84008L-E bảng dữ liệu(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() Preliminary Data This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. March 2008 Rev 2 1/14 14 PD84008L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 13 dB gain @ 870 MHz / 7.5 V ■ Plastic package ■ ESD protection ■ In compliance with the 2002/95/EC european directive Description The is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5 V in common source mode at frequencies of up to 1 GHz. boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in leadless SMD plastic RF power package , PowerFLAT™. Figure 1. Pin connection PowerFLATTM (5 mm x 5 mm) Table 1. Device summary Order code Marking Package Packing PD84008L-E 84008 PowerFLATTM Tape and reel www.st.com |
Số phần tương tự - PD84008L-E |
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Mô tả tương tự - PD84008L-E |
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