BTB08-600SW datasheet(5/12 Pages) STMICROELECTRONICS

5 / 12 page

BTA08, BTB08 and T8 Series

Characteristics

Doc ID 7472 Rev 7

5/12

Figure 7.

Non-repetitive surge peak on-state

current for a sinusoidal

Figure 8.

Relative variation of gate trigger

current

0.01

0.10

1.00

10.00

100

1000

(A), I t (A s)

TSM

t (ms)

T initial=25°C

ITSM

dI/dt limitation:

50A/µs

I t

pulse with width t < 10 ms and corresponding value of I t

360°

-40

-20

100

120

140

0.0

0.5

1.0

1.5

2.0

2.5

T (°C)

I,I ,I [T ] /

GTHL

,I ,I [T =25°C]

GTHL

IGT

IH & IL

holding current and latching current

versus junction temperature (typical values)

Figure 9.

Relative variation of critical rate of

decrease of main current versus

(dV/dt)c (typical values)

Figure 10.

Relative variation of critical rate of

decrease of main current versus

(dV/dt)c (typical values)

0.1

1.0

10.0

100.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

(dV/dt)c (V/µs)

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

T835/CW/BW

T810/SW

Snubberless and Logic level types

0.1

1.0

10.0

100.0

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

(dV/dt)c (V/µs)

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

Standard types

Figure 11.

Relative variation of critical rate of

decrease of main current versus

junction temperature

Figure 12.

DPAK and D2PAK thermal resistance

junction to ambient versus copper

surface under tab

100

125

(dI/dt)c [T ] /

pecified]

(dI/dt)c [T s

T (°C)

1216202428323640

100

S(cm²)

(°C/W)

th(j-a)

DPAK

printed circuit board FR4, copper thickness: 35 µm

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