A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. B

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

NONE

SYMBOL

TEST CONDITIONS

MINIMUM

TYPICAL MAXIMUM

UNITS

125

V

5.0

mA

1.0

µµµµA

1.0

7.0

V

gM

5.5

Mho

0.30

Ω

Ω

Ω

Ω

35

A

f = 1.0 MHz

400

200

15

pF

ηηηη

ψ

ψ

ψ

ψ

f = 225 MHz

14

50

20:1

dB

%

---

POWER MOSFET

N-Channel Enhancement Mode

BLF378

PACKAGE STYLE .400 BAL FLG(D)

1 & 2 = DRAIN

3 & 4 = GATE

5 = SOURCE

DESCRIPTION:

The

Enhancement-Mode RF Power

MOSFET Designed for broadband RF

Applications up to 225 MHz.

FEATURES INCLUDE:

• 20:1 Load VSWR Capability

• Omnigold™ metalization system

MAXIMUM RATINGS

18 A

125 V

20 V

-65 °C to +200 °C

-65 °C to +150 °C

θθθθ

JC

0.35 °C/W