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SL2S2002 bảng dữ liệu(PDF) 7 Page - NXP Semiconductors

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SL2S2002_SL2S2102_SDS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product short data sheet
PUBLIC
Rev. 3.2 — 10 January 2011
198332
7 of 13
NXP Semiconductors
SL2S2002; SL2S2102
ICODE SLIX
8.
Limiting values
[1]
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any conditions other than those described in the operating conditions and electrical
characteristics sections of this specification is not implied.
[2]
This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive static
charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated maxima.
[3]
The voltage between LA and LB is limited by the on-chip voltage limitation circuitry (corresponding to parameter II).
[4]
For ESD measurement, the IC was mounted in a CDIP8 package.
Table 5.
Limiting values (Wafer)[1][2]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Tstg
storage temperature
−55
+125
°C
Ptot
total power dissipation
-
125
mW
Tj
junction temperature
−40
+85
°C
Ii(max)
maximum input current
LA to LB; peak
[3] -
±60
mA
II
input current
LA to LB; RMS
-
30
mA
VESD
electrostatic discharge voltage
Human body model
[4] -
±2kV



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