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1F4 bảng dữ liệu(PDF) 1 Page - EIC discrete Semiconductors |
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1F4 bảng dữ liệu(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page ![]() 1F1 ~ 1F7 FAST RECOVERY DIODES PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * High current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency MECHANICAL DATA : * Case : Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.20 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL 1F1 1F2 1F3 1F4 1F5 1F6 1F7 UNIT Maximum Repetitive Peak Reverse VoltageVRRM 50 100 200 400 600 800 1000V Maximum RMS VoltageVRMS 35 70 140 280 420 560 700V Maximum DC Blocking VoltageVDC 50 100 200 400 600 800 1000V Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 55 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 1.0 A.VF 1.3 V Maximum DC Reverse Current Ta = 25 °C IR 5.0 µA at rated DC Blocking Voltage Ta = 100 °C IR(H) 100 µA Maximum Reverse Recovery Time (1) Trr 150 250 500 ns Typical Junction Capacitance (2)CJ 15 pF Junction Temperature RangeTJ - 65 to + 125 °C Storage Temperature RangeTSTG - 65 to + 150 °C Notes : (1) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC Page 1 of 2 Rev. 03 : July 8, 2005 A A RATING IF(AV) 1.0 IFSM 30 R-1 Dimensions in inches and ( millimeters ) 1.00 (25.4) MIN. 0.099 (2.51) 0.95 (2.42) 0.138 (3.5) 0.114 (2.9) 1.00 (25.4) MIN. 0.024 (0.6) 0.020 (0.5) * Pb / RoHS Free |
Số phần tương tự - 1F4 |
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Mô tả tương tự - 1F4 |
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