TLE7269G datasheet(21/34 Pages) INFINEON

21 / 34 page

Data Sheet

Rev. 1.2, 2007-11-13

TLE7269G

Electrical Characteristics

6.1

Functional Device Characteristics

Table 7

Electrical Characteristics

7.0 V < VS < 27 V; RL = 500 Ω; Vio = 5V; -40 °C < Tj < 125 °C; all voltages with respect to ground; positive current

flowing into pin; unless otherwise specified.

Pos.

Parameter

Symbol

Limit Values

Unit Remarks

Min.

Typ.

Max.

Current Consumption

6.1.1

Current consumption at

VS(both channels recessive)

IS,rec

0.5

1.6

3.0

recessive state, without RL;

VS = 13.5 V

VTxD = Vio

6.1.2

Current consumption normal

mode at Vio

IVIO,norm

–

µA

Normal Operation mode.

VIO=5 V

6.1.3

Current consumption

at VS (both channels

dominant)

IS,dom

–

5.0

dominant state, without RL;

VS = 13.5 V;

VTxD = 0 V

6.1.4

Current consumption

in sleep mode at Vio

IVIO,Sleep

–

µA

Sleep mode, VIO=5 V

6.1.5

Current consumption

in sleep mode

IS,Sleep

–7

µA

Sleep mode,

VS = 18 V;

VBUS= VWK = VS;

6.1.6

Current consumption in sleep

mode

IS,Sleep,typ

–

µA

Sleep mode, Tj < 85 °C;

VS = 13.5 V;

VWK= VS= VBUS;

Under Voltage Detection

6.1.7

Blocking under voltage

detection at

(

S on the falling edge)

Vs,UV,BLK

3.5

–

Communication blocked

no reset (see Figure 11)

6.1.8

Power ON under voltage

detection at

Vs,UV,PON

–

3.5

Device reset to Stand-By-

Mode 1)(see Figure 11)

6.1.9

Under voltage detection at

IO VIO,UV

1.5

2.5

Communication blocked

no reset (see Figure 11)

6.1.10 Under voltage blanking time

tblankUV

–5

–

µs

Receiver Outputs: RxD1, RxD2

6.1.11 HIGH level output current

IRD,H

–10

-4

-2

VRD = 0.8 × VIO

6.1.12 LOW level output current

IRD,L

VRD = 0.2 × VIO

TLE7269G bảng dữ liệu(PDF) 21 Page - Infineon Technologies AG

TLE7269G bảng dữ liệu(HTML) 21 Page - Infineon Technologies AG

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34

bảng dữ liệu tải về

Link URL