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MHVIC915R2 bảng dữ liệu(PDF) 2 Page - Freescale Semiconductor, Inc |
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MHVIC915R2 bảng dữ liệu(HTML) 2 Page - Freescale Semiconductor, Inc |
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2 / 14 page ![]() 2 RF Device Data Freescale Semiconductor MHVIC915R2 Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage VDSS -0.5, +65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Storage Temperature Range Tstg -65 to +150 °C Operating Junction Temperature TJ 150 °C Table 2. Thermal Characteristics Characteristic Symbol Value (1) Unit Thermal Resistance, Junction to Case Driver Application Stage 1, 27 Vdc, IDQ = 80 mA (Pout = 0.2 W CW) Stage 2, 27 Vdc, IDQ = 120 mA Output Application Stage 1, 27 Vdc, IDQ = 80 mA (Pout = 2.5 W CW) Stage 2, 27 Vdc, IDQ = 120 mA GSM Application Stage 1, 26 Vdc, IDQ = 50 mA (Pout = 15 W CW) Stage 2, 26 Vdc, IDQ = 140 mA RθJC 15.1 5.1 15.8 5.0 13.8 4.5 °C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 0 (Minimum) Machine Model (per EIA/JESD22-A115) A (Minimum) Charge Device Model (per JESD22-C101) II (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD 22-A113, IPC/JEDEC J-STD-020 3 240 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 27 Vdc, IDQ1 = 80 mA, IDQ2 = 120 mA, f = 880 MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @ ±750 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain (Pout = 23 dBm) Gps 29 31 — dB Power Added Efficiency (Pout = 34 dBm) PAE — 21 — % Input Return Loss (Pout = 23 dBm) IRL — -12 -9 dB Adjacent Channel Power Ratio (Pout = 23 dBm) ACPR — -60 -55 dBc Adjacent Channel Power Ratio (Pout = 34 dBm) ACPR — -50 — dBc Gain Flatness @ Pout = 23 dBm (865 MHz to 895 MHz) GF — 0.2 0.4 dB Bias Sense FET Drain Current VBSD = 27 V VBIAS BSG = VBIAS2 Q2 @ IDQ2 = 120 mA IBSD 0.8 1.2 1.6 mA 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (continued) |
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