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IPT2006-CEB bảng dữ liệu(PDF) 1 Page - IP SEMICONDUCTOR CO., LTD. |
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IPT2006-CEB bảng dữ liệu(HTML) 1 Page - IP SEMICONDUCTOR CO., LTD. |
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1 / 4 page ![]() IP Semiconductor Co., Ltd. IPT2006-xxB High current density due to double mesa technology; SIPOS and Glass Passivation. IPT2006-xx series are suitable for general purpose AC Switching. They can be used as an ON/OFF function In application such as static relays, heating regulation, Induction motor stating circuits… or for phase Control operation light dimmers, motor speed Controllers. IPT2006-xxB series is 3 Quadrants triacs, This is specially recommended for use on inductive Loads.. MAIN FEATURES ABSOLUTE MAXIMUM RATINGS 1 Symbol Value Unit IT(RMS) 20 A VDRM / VRRM 600 V VTM ≤ 1.65 V Parameter Symbol Value Unit Storage Junction Temperature Range Operating Junction Temperature Range Tstg Tj -40 to +150 -40 to +125 ℃ Repetitive Peak Off-state Voltage Tj = 25℃ Repetitive Peak Reverse Voltage VDRM VRRM 600 600 V Non Repetitive Peak Off-state Voltage Tj = 25℃ Non Repetitive Peak Reverse Voltage VDSM VRSM 700 700 V RMS on –state current Tc = 70℃ (360º conduction angle ) IT(RMS) 20 A Non repetitive surge peak on –state Current t = 8.3ms (full cycle, Tj = 25℃) t = 10ms ITSM 210 200 A I²t Value for fusing tp = 10ms I²t 200 A²s Critical Rate of rise of on-state current Repetitive F = 50Hz Gate supply : IG = 500mA dIG/dt = 1A/us Non repetitive dI / dt 20 100 A/us Peak gate current tp = 20us, Tj = 125 ℃ IGM 8 A Average gate power dissipation Tj = 125 ℃ PG(AV) 1 W TO-220B 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com |
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