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IRGS4062DPBF bảng dữ liệu(PDF) 1 Page - International Rectifier |
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IRGS4062DPBF bảng dữ liệu(HTML) 1 Page - International Rectifier |
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1 / 12 page  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGS4062DPbF IRGSL4062DPbF 1 www.irf.com 12/07/09 E G n-channel C VCES = 600V IC = 24A, TC = 100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(on) typ. = 1.65V Features • Low VCE (ON) Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 µS short circuit SOA • Square RBSOA • 100% of the parts tested for 4X rated current (ILM) • Positive VCE (ON) Temperature co-efficient • Ultra fast soft Recovery Co-Pak Diode • Tight parameter distribution • Lead Free Package Benefits • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI GC E Gate Collector Emitter PD - 97355B E C G C C E G D2Pak IRGS4062DPbF TO-262 IRGSL4062DPbF Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 48 IC @ TC = 100°C Continuous Collector Current 24 ICM Pulse Collector Current 96 ILM Clamped Inductive Load Current c 96 A IF @ TC = 25°C Diode Continous Forward Current 48 IF @ TC = 100°C Diode Continous Forward Current 24 IFM Diode Maximum Forward Current d 96 VGE Continuous Gate-to-Emitter Voltage ±20 V Transient Gate-to-Emitter Voltage ±30 PD @ TC = 25°C Maximum Power Dissipation 250 W PD @ TC = 100°C Maximum Power Dissipation 125 TJ Operating Junction and -55 to +175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter Min. Typ. Max. Units RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.60 RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 1.53 °C/W RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.50 ––– RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 80 ––– |
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