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STF23NM60ND bảng dữ liệu(PDF) 3 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-channel 600 V, 0.150 Ω, 19.5 A, FDmesh??II Power MOSFET (with fast diode) D²PAK, I²PAK, TO-220, TO-220FP, TO-247
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STB/I/F/P/W23NM60ND
Electrical ratings
Doc ID 14367 Rev 3
3/18
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
D²PAK, I²PAK
TO-220, TO-247
TO-220FP
VDS
Drain-source voltage (VGS=0)
600
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
19.5
19.5 (1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC = 100 °C
11.7
11.7 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
78
78 (1)
A
PTOT
Total dissipation at TC = 25 °C
150
35
W
dv/dt (3)
3.
ISD ≤ 19.5 A, di/dt ≤ 600 A/µs, VDD =80% V(BR)DSS
Peak diode recovery voltage slope
40
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
2500
V
Tstg
Storage temperature
-55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
D²PAK
I²PAK
TO-220 TO-247 TO-220FP
Unit
Rthj-case
Thermal resistance junction-
case max
0.83
3.6
°C/W
Rthj-amb
Thermal resistance junction-
amb max
62.5
50
62.5
°C/W
Tl
Maximum lead temperature for
soldering purposes
300
°C
Table 4.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
9A
EAS
Single pulse avalanche energy
(starting Tj= 25 °C, ID = IAS, VDD = 50 V)
700
mJ



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