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BAS21AHT1D bảng dữ liệu(PDF) 1 Page - ON Semiconductor

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Giải thích chi tiết về linh kiện  Low Leakage Switching Diode
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 Semiconductor Components Industries, LLC, 2010
August, 2010 -- Rev. 1
1
Publication Order Number:
BAS21AHT1/D
BAS21AHT1G
Low Leakage
Switching Diode
Features
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Symbol
Rating
Value
Unit
VR
Continuous Reverse Voltage
250
Vdc
VRRM
Repetitive Peak Reverse Voltage
250
Vdc
IF
Peak Forward Current
200
mAdc
IFM(surge) Peak Forward Surge Current
625
mAdc
THERMAL CHARACTERISTICS
Symbol
Characteristic
Max
Unit
PD
Total Device Dissipation FR--5 Board,
(Note 1) TA =25C
Derate above 25C
200
1.57
mW
mW/C
RθJA
Thermal Resistance,
Junction--to--Ambient
635
C/W
TJ,Tstg
Junction and Storage Temperature
Range
--55 to +150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR--5 Minimum Pad
LOW LEAKAGE
SWITCHING DIODE
Device
Package
Shipping†
ORDERING INFORMATION
SOD--323
CASE 477
STYLE 1
1
CATHODE
2
ANODE
http://onsemi.com
MARKING
DIAGRAM
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BAS21AHT1G
SOD--323
(Pb--Free)
3000/Tape & Reel
AA M G
G
1
2
AA
= Device Code
M
= Date Code*
G
= Pb--Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.


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