BAV102 datasheet(1/2 Pages) EIC

tên linh kiện	BAV102

Giải thích chi tiết về linh kiện	HIGH SPEED SWITCHING DIODES

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nhà sản xuất	EIC [EIC discrete Semiconductors]

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BAV100 ~ BAV103

HIGH SPEED SWITCHING DIODES

FEATURES :

• Switching speed: max. 50 ns

• General application

• Continuous reverse voltage:

max. 50 V, 100 V, 150 V and 200 V respectively

• Repetitive peak reverse voltage:

max. 60 V, 120 V, 200 V and 250 V respectively

• Repetitive peak forward current: max. 625 mA.

• Pb / RoHS Free

MECHANICAL DATA :

Case: MiniMELF Glass Case (SOD-80)

Weight: approx. 0.05g

Maximum Ratings and Thermal Characteristics (Rating at 25

°C ambient temperature unless otherwise specified.)

Symbol

Value

Unit

BAV100

60

BAV101

120

BAV102

200

BAV103

250

BAV100

50

BAV101

100

BAV102

150

BAV103

200

Maximum Repetitive Peak Forward Current

IFRM

625

mA

Maximum Continuous Forward Current

IF

mA

at t = 100

µs , Tj = 25°C

3.0

at t = 1s , Tj = 25

°C

1.0

Maximum Power Dissipation

PD

400

mW

Maximum Junction Temperature

TJ

175

°C

Storage Temperature Range

TS

-65 to + 175

°C

Electrical Characteristics (T

J = 25°C unless otherwise noted)

Parameter

Symbol

Min.

Typ.

Max.

Unit

VR = 50 V

-

100

VR = 100 V

-

100

VR = 150 V

-

100

VR = 200 V

-

100

IF = 100 mA

-

1.0

IF = 200 mA

-

1.25

Diode Capacitance

Cd

-

5.0

pF

IF = 30 mA to IR = 30mA

RL = 100 Ω ; measured

at IR = 3mA

Page 1 of 2

Rev. 02 : March 25, 2005

ns

50

f = 1MHz ; VR = 0

-

Reverse Recovery Time

Trr

IR

Forward Voltage

VF

Parameter

Maximum Continuous Reverse Voltage

VR

V

Maximum Repetitive Peak Reverse Voltage

VRRM

V

Maximum Surge Forward Current

250

V

nA

IFSM

A

Reverse Current

Test Condition

0.142(3.6)

0.134(3.4)

φ 0.063 (1.64)

0.055 (1.40)

0.019(0.48)

0.011(0.28)

Cathode Mark

MiniMELF (SOD-80C)

0.098 (2.50)

Max.

Dimensions in inches and ( millimeters )

Mounting Pad Layout

0.049 (1.25)Min.

0.197 (5.00)

REF

0.079 (2.00)Min.

Số phần tương tự - BAV102

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
NXP Semiconductors	BAV102	34Kb / 8P	General purpose diodes 1996 Sep 17
Vishay Siliconix	BAV102	54Kb / 4P	Silicon Epitaxial Planar Diodes 01-Apr-99
Fairchild Semiconductor	BAV102	26Kb / 3P	High Voltage, General Purpose Diode
Diodes Incorporated	BAV102	58Kb / 2P	SURFACE MOUNT SWITCHING DIODE DS12017 Rev. J-2
General Semiconductor	BAV102	144Kb / 4P	Small Signal Diodes

More results

Mô tả tương tự - BAV102

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