STU95N2LH5 datasheet(4/17 Pages) STMICROELECTRONICS

tên linh kiện	STU95N2LH5

Giải thích chi tiết về linh kiện	N-channel 25 V, 0.0038 Ω, 80 A, DPAK, IPAK, TO-220 STripFET™V Power MOSFET

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Electrical characteristics

STD95N2LH5, STP95N2LH5, STU95N2LH5

4/17

Doc ID 13834 Rev 5

Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 4.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

Voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 25 V

VDS = 25 V,Tc = 125°C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 22 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 40 A

SMD version

0.0038 0.0045

Ω

VGS= 10 V, ID= 40 A

0.0044 0.0049

Ω

VGS= 5 V, ID= 40 A

SMD version

0.005

0.006

Ω

VGS= 5 V, ID= 40 A

0.006

0.007

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz,

VGS=0

1817

420

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=13 V, ID = 80 A

VGS =5 V

Figure 18

13.4

6.7

4.1

Qgs1

Qgs2

Pre Vth gate-to-source

charge

Post Vth gate-to-source

charge

VDD=13 V, ID = 80 A

Figure 21

3.5

3.2

Gate input resistance

f=1 MHz gate bias

Bias= 0 test signal

level=20 mV

open drain

-1.1

Ω

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