STF11NM60N datasheet(3/20 Pages) STMICROELECTRONICS

tên linh kiện	STF11NM60N

Giải thích chi tiết về linh kiện	N-channel 600 V, 0.37 Ω, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK

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STx11NM60N

Electrical ratings

3/20

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220,I²PAK,

D²PAK,DPAK,IPAK

TO-220FP

VDS

Drain-source voltage (VGS = 0)

600

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

10(1)

Limited only by maximum temperature allowed

Drain current (continuous) at TC = 100 °C

6.3

6.3 (1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

40(1)

PTOT

Total dissipation at TC = 25 °C

Derating factor

0.8

0.2

W/°C

dv/dt (3)

ISD ≤ 10 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink (t = 1 s;TC

= 25 °C)

2500

Tstg

Storage temperature

-55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220 I²PAK DPAK D²PAK IPAK TO-220FP

Rthj-case

Thermal resistance

junction-case max

1.38

°C/W

Rthj-amb

Thermal resistance

junction-amb max

62.5

100

62.5

°C/W

Rthj-pcb

Thermal resistance

junction-pcb max

°C/W

Maximum lead

temperature for soldering

purposes

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Max value

Unit

IAS

Avalanche current, repetitive or not-repetitive

(pulse width limited by TJ max)

3.5

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAS, VDD = 50 V)

200

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