NCE7580D datasheet(1/7 Pages) NCEPOWER

tên linh kiện	NCE7580D

Giải thích chi tiết về linh kiện	NCE N-Channel Enhancement Mode Power MOSFET

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NCE7580D

Pb Free Product

http://www.ncepower.com

Wuxi NCE Power Semiconductor Co., Ltd

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v1.0

1

NCE N-Channel Enhancement Mode Power MOSFET

DESCRIPTION

The NCE7580D uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and

general purpose applications.

GENERAL FEATURES

●

VDS = 75V,ID =80A

RDS(ON) <8mΩ @ VGS=10V（Typ：6.5mΩ）

●

Special process technology for high ESD capability

●

Special designed for Convertors and power controls

●

High density cell design for ultra low Rdson

●

Fully characterized Avalanche voltage and current

●

Good stability and uniformity with high EAS

●

Excellent package for good heat dissipation

Application

●

Power switching application

●

Hard Switched and High Frequency Circuits

●

Uninterruptible Power Supply

Schematic diagram

Marking and pin Assignment

TO-263-2L top view

Package Marking And Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE7580D

TO-263-2L

-

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

75

V

Gate-Source Voltage

VGS

±25

V

Drain Current-Continuous

ID

80

A

Drain Current-Continuous(TC=100℃)

ID (100℃)

78

A

Pulsed Drain Current

IDM

320

A

Maximum Power Dissipation

PD

30

W

Peak diode recovery voltage

dv/dt

170

V/ns

Derating factor

1.13

W/℃

Single pulse avalanche energy (Note 5)

EAS

580

mJ

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 175

℃

Số phần tương tự - NCE7580D

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Mô tả tương tự - NCE7580D

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NCE7580D bảng dữ liệu(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd

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Số phần tương tự - NCE7580D

Mô tả tương tự - NCE7580D

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