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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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NCE75H21 bảng dữ liệu(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE75H21 bảng dữ liệu(HTML) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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1 / 7 page  NCE75H21 Pb Free Product http://www.ncepower.com Wuxi NCE Power Semiconductor Co., Ltd Page v1.0 1 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE75H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. GENERAL FEATURES ● VDSS =75V,ID =210A RDS(ON) < 4mΩ @ VGS=10V ● Good stability and uniformity with high EAS ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Excellent package for good heat dissipation Application ● Automotive applications ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply 100% UIS TESTED! 100% ΔVds TESTED! Schematic diagram Marking and pin Assignment TO-220 top view Package Marking And Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCE75H21 NCE75H21 TO-220 - - - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDSS 75 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 210 A Drain Current-Continuous(TC=100℃) ID (100℃) 150 A Pulsed Drain Current IDM 850 A Maximum Power Dissipation PD 480 W Derating factor 3.2 W/℃ Single pulse avalanche energy (Note 3) EAS 2200 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 5 V/ns Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃ |
Số phần tương tự - NCE75H21 |
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Mô tả tương tự - NCE75H21 |
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