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MBD701 bảng dữ liệu(PDF) 1 Page - ON Semiconductor

tên linh kiện MBD701
Giải thích chi tiết về linh kiện  Silicon Hot-Carrier Diodes Schottky Barrier Diodes
PDF  4 Pages
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nhà sản xuất  ONSEMI [ON Semiconductor]
Trang chủ  http://www.onsemi.com
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MBD701 bảng dữ liệu(HTML) 1 Page - ON Semiconductor

  MBD701_09 Datasheet HTML 1Page - ON Semiconductor MBD701_09 Datasheet HTML 2Page - ON Semiconductor MBD701_09 Datasheet HTML 3Page - ON Semiconductor MBD701_09 Datasheet HTML 4Page - ON Semiconductor  
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© Semiconductor Components Industries, LLC, 2009
March, 2009 − Rev. 5
1
Publication Order Number:
MBD701/D
MBD701, MMBD701LT1
Preferred Device
Silicon Hot-Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for high−efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low−cost, high−volume consumer
and industrial/commercial requirements. They are also available in a
Surface Mount package.
Features
• Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
• Very Low Capacitance − 1.0 pF @ VR = 20 V
• High Reverse Voltage − to 70 V
• Low Reverse Leakage − 200 nA (Max)
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
V
Forward Power Dissipation
@ TA = 25°C
MBD701
MMBD701LT
Derate above 25°C
MBD701
MMBD701LT
PF
280
200
2.8
2.0
mW
mW/°C
Operating Junction Temperature
Range
TJ
−55 to +125
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
RecommendedOperating Conditions may affect device reliability.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 mAdc)
V(BR)R
70
−
−
V
Total Capacitance
(VR = 20 V, f = 1.0 MHz) Figure 1
CT
−
0.5
1.0
pF
Reverse Leakage
(VR = 35 V) Figure 3
IR
−
9.0
200
nAdc
Forward Voltage
(IF = 1.0 mAdc) Figure 4
VF
−
0.42
0.5
Vdc
Forward Voltage
(IF = 10 mAdc) Figure 4
VF
−
0.7
1.0
Vdc
http://onsemi.com
SOT−23 (TO−236)
CASE 318
STYLE 8
Preferred devices are recommended choices for future use
and best overall value.
1
2
3
Device
Package
Shipping†
ORDERING INFORMATION
MBD701
TO−92
1,000 Units / Box
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MBD701G
TO−92
(Pb−Free)
1,000 Units / Box
MMBD701LT1
SOT−23
3,000 / Tape & Reel
MMBD701LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
1
5H M G
G
A
= Assembly Location
Y
= Year
WW = Work Week
5H = Device Code (SOT−23)
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
MARKING
DIAGRAMS
3
CATHODE
1
ANODE
2
CATHODE
1
ANODE
TO−92 2−Lead
CASE 182
STYLE 1
1
2
MBD
701
AYWW G
G
MMBD701LT3
SOT−23
10,000/Tape & Reel
MMBD701LT3G
SOT−23
(Pb−Free)
10,000/Tape & Reel


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