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RGF1D bảng dữ liệu(PDF) 1 Page - EIC discrete Semiconductors |
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RGF1D bảng dữ liệu(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page ![]() RGF1A - RGF1M SURFACE MOUNT FAST RECOVERY RECTIFIERS PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency * Pb / RoHS Free MECHANICAL DATA : * Case : SMA Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Lead Formed for Surface Mount * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.21 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specifie. Single phase, half wave, 60 Hz, resistive or inductive load For capacitive load, derate current by 20% SYMBOL RGF1A RGF1B RGF1D RGF1G RGF1J RGF1KRGF1M UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Current TL = 125 °CIF(AV) 1.0 A Peak Forward Surge Current, 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at IF = 1.0 A VF 1.3 V Maximum DC Reverse Current Ta = 25 °C IR 5 at Rated DC Blocking Voltage Ta = 125 °C IR(H) 100 Maximum Reverse Recovery Time (Note 1) Trr 150 250 500 ns Total Capacitance (Note 2) CT 8.5 pf Junction Temperature Range TJ - 65 to + 175 °C Storage Temperature Range TSTG - 65 to + 175 °C Notes : ( 1 ) Reverse Recovery Test Conditions : I F = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC Page 1 of 2 Rev. 02 : March 25, 2005 μA RATING IFSM 30 A 2.0 ± 0.2 2.1 ± 0.2 SMA (DO-214AC) 1.2 ± 0.2 2.6 ± 0.15 Dimensions in millimeter 1.1 ± 0.3 0.2 ± 0.07 |
Số phần tương tự - RGF1D |
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Mô tả tương tự - RGF1D |
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