M48T512V datasheet(18/23 Pages) STMICROELECTRONICS

tên linh kiện	M48T512V

Giải thích chi tiết về linh kiện	5.0 or 3.3 V, 4 Mbit (512 Kbit x 8) TIMEKEEPER짰 SRAM

PDF	23 Pages

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DC and AC parameters

M48T512Y, M48T512V

18/23

Doc ID 5747 Rev 6

Table 10.

Power down/up AC characteristics

Table 11.

Power down/up trip points DC characteristics

Symbol

Parameter(1)

Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.5 to 5.5 V or 3.0 to 3.6 V (except where noted).

Min

Max

Unit

(2)

VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200µs after

VCC passes VPFD (min).

VPFD (max) to VPFD (min) VCC fall time

300

µs

tFB

(3)

VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.

VPFD (min) to VSS VCC fall time

M48T512Y

µs

M48T512V

150

µs

VPFD (min) to VPFD (max) VCC rise time

µs

tRB

VSS to VPFD (min) VCC rise time

µs

tREC

E recovery time

200

Symbol

Parameter(1)(2)

All voltages referenced to VSS.

Valid for ambient operating temperature: TA = 0 to 70 °C; VCC = 4.5 to 5.5 V or 3.0 to 3.6 V (except where noted).

Min

Typ

Max

Unit

VPFD

Power-fail deselect voltage

M48T512Y

4.2

4.35

4.5

M48T512V

2.7

2.9

3.0

VSO

Battery backup switchover voltage

M48T512Y

3.0

M48T512V

VPFD –100mV

tDR

(3)

At 25 °C, VCC = 0 V.

Expected data retention time

YEARS

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