2N6284_09 datasheet(3/8 Pages) STMICROELECTRONICS

tên linh kiện	2N6284

Giải thích chi tiết về linh kiện	Complementary power Darlington transistors

PDF	8 Pages

Scroll/Zoom	100%

nhà sản xuất	STMICROELECTRONICS [STMicroelectronics]

Trang chủ	http://www.st.com

Logo

3 / 8 page

2N6284 - 2N6287

Electrical characteristics

3/8

Electrical characteristics

(Tcase = 25 °C; unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICEV

Collector cut-off current

(VBE = -1.5 V)

VCE = 100 V

Tc = 150 °C

0.5

ICEO

Collector cut-off current

(IB = 0)

VCE = 50 V

IEBO

Emitter cut-off current

(IC = 0)

VEB = 5 V

VCEO(sus)

(1)

Pulsed duration = 300 µs, duty cycle

≤1.5 %

For PNP type voltage and current values are negative

Collector-emitter

sustaining voltage (IB = 0)

IC = 100 mA

100

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = 10 A

IB = 40 mA

IC = 20 A __ IB = 200 mA

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 20 A __ IB = 200 mA

VBE

(1)

Base-emitter voltage

IC = 10 A __

VCE = 3 V

2.8

hFE

(1)

DC current gain

IC = 10 A_

VCE = 3 V

IC = 20 A_

VCE = 3 V

750

100

18000

hfe

Small signal current gain

IC = 10 A_

VCE = 3 V

f = 1 kHz

300

CCBO

Collector-base

capacitance (IE = 0)

VCB = 10 V

f = 100 kHz

for 2N6284

for 2N6287

400

600

2N6284 bảng dữ liệu(PDF) 3 Page - STMicroelectronics

2N6284 bảng dữ liệu(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8

bảng dữ liệu tải về

Link URL