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IRHM7450 bảng dữ liệu(PDF) 2 Page - International Rectifier

tên linh kiện IRHM7450
Giải thích chi tiết về linh kiện  RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
PDF  12 Pages
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nhà sản xuất  IRF [International Rectifier]
Trang chủ  http://www.irf.com
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IRHM7450 bảng dữ liệu(HTML) 2 Page - International Rectifier

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IRHM7450, JANSR2N7270
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
500
—
—
V
VGS =0 V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown —
0.6
—
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source
—
—
0.45
VGS = 12V, ID = 7.0A „
On-State Resistance
—
—
0.50
Ω
VGS = 12V, ID = 11A
VGS(th)
Gate Threshold Voltage
2.0
—
4.0
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
4.0
—
—
S ( )VDS > 15V, IDS = 7.0A „
IDSS
Zero Gate Voltage Drain Current
—
—
50
VDS= 400V,VGS=0V
—
—
250
VDS = 400V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
—
—
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
—
—
-100
VGS = -20V
Qg
Total Gate Charge
—
—
150
VGS = 12V, ID = 11A
Qgs
Gate-to-Source Charge
—
—
30
nC
VDS = 250V
Qgd
Gate-to-Drain (‘Miller’) Charge
—
—
75
td(on)
Turn-On Delay Time
—
—
45
VDD = 250V, ID = 11A,
tr
Rise Time
—
—
190
VGS = 12V, RG = 2.35Ω
td(off)
Turn-Off Delay Time
—
—
190
tf
Fall Time
—
—
130
LS + LD
Total Inductance
—
8.7
—
Ciss
Input Capacitance
—
4000
—
VGS = 0V, VDS = 25V
Coss
Output Capacitance
—
330
—
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
—
52
—
nA
nH
ns
µA
Note: Corresponding Spice and Saber models are available on the International Rectifier Website.
For footnotes refer to the last page
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
—
—
0.83
RthCS
Case-to-sink
—
0.21
—
RthJA
Junction-to-Ambient
—
—
48
Typical socket mount
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
—
—
11
ISM
Pulse Source Current (Body Diode)
À
——
44
VSD
Diode Forward Voltage
—
—
1.6
V
Tj = 25°C, IS = 11A, VGS = 0V Ã
trr
Reverse Recovery Time
—
—
1100
ns
Tj = 25°C, IF = 11A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge
—
—
16
µC
VDD ≤ 50V Ã
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)



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