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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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IRF7342D2 bảng dữ liệu(PDF) 1 Page - International Rectifier |
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IRF7342D2 bảng dữ liệu(HTML) 1 Page - International Rectifier |
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1 / 11 page  Parameter Maximum Units ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -3.4 A ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -2.7 IDM Pulsed Drain Current À -27 PD @TA = 25°C Power Dissipation 2.0 W PD @TA = 70°C Power Dissipation 1.3 Linear Derating Factor 16 mW/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt Á -5.0 V/ns TJ, TSTG Junction and Storage Temperature Range -55 to +150 °C l Co-packaged HEXFET ® Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l P-Channel HEXFET ® l Low VF Schottky Rectifier l SO-8 Footprint IRF7342D2 10/21/04 FETKY MOSFET & Schottky Diode Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted) TM Description VDSS = -55V RDS(on) = 105mΩ Schottky Vf = 0.61V The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. Top View 8 1 2 3 4 5 6 7 A A S G D D K K Notes: Repetitive rating – pulse width limited by max. junction temperature (see fig. 11) I SD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 400µs – duty cycle ≤ 2% Surface mounted on 1 inch square copper board, t ≤ 10sec. SO-8 www.irf.com 1 Symbol Parameter Typ. Max. Units RθJL Junction-to-Drain Lead, MOSFET ––– 20 RθJA Junction-to-Ambient , MOSFET ––– 62.5 °C/W Thermal Resistance RθJA Junction-to-Ambient , SCHOTTKY ––– 62.5 PD- 94101A |
Số phần tương tự - IRF7342D2 |
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Mô tả tương tự - IRF7342D2 |
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