IRF7YSZ44VCM datasheet(1/7 Pages) IRF

tên linh kiện	IRF7YSZ44VCM

Giải thích chi tiết về linh kiện	HEXFET짰 POWER MOSFET THRU-HOLE (Low-ohmic TO-257AA

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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 10V, TC = 25°C

Continuous Drain Current

20*

ID @ VGS = 10V, TC = 100°C Continuous Drain Current

20*

IDM

Pulsed Drain Current ➀

80

PD @ TC = 25°C

Max. Power Dissipation

50

W

Linear Derating Factor

0.4

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy ➁

71

mJ

IAR

Avalanche Current ➀

20

A

EAR

Repetitive Avalanche Energy ➀

5.0

mJ

dv/dt

Peak Diode Recovery dv/dt ➂

1.6

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (0.063in./1.6mm from case for 10s)

Weight

4.3 (Typical)

g

oC

A

02/07/03

www.irf.com

1

Product Summary

Part Number

BVDSS

RDS(on)

ID

IRF7YSZ44VCM

60V

0.0195

Ω 20A*

For footnotes refer to the last page

HEXFET® POWER MOSFET

IRF7YSZ44VCM

THRU-HOLE (Low-ohmic TO-257AA)

60V, N-CHANNEL

Seventh Generation HEXFET® power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve the lowest possible on-resistance

per silicon unit area. This benefit, combined with the

fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient device

for use in a wide variety of applications.

These devices are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy pulse

circuits.

Features:

n Low RDS(on)

n Avalanche Energy Ratings

n Dynamic dv/dt Rating

n Simple Drive Requirements

n Ease of Paralleling

n Hermetically Sealed

n Light Weight

Low Ohmic

TO-257AA

* Current is limited by package

PD - 94603

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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International Rectifier	IRF7YSZ44VCM	117Kb / 7P	Avalanche Energy Ratings

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