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UR5596-S08-R bảng dữ liệu(PDF) 4 Page - Unisonic Technologies

tên linh kiện UR5596-S08-R
Giải thích chi tiết về linh kiện  DDR TERMINATION REGULATOR
PDF  12 Pages
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nhà sản xuất  UTC [Unisonic Technologies]
Trang chủ  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UR5596-S08-R bảng dữ liệu(HTML) 4 Page - Unisonic Technologies

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UR5596
CMOS IC
UNISONICTECHNOLOGIESCO.,LTD
4 of 12
www.unisonic.com.tw
QW-R502-045,C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
PVIN, AVIN, VDDQ to GND
VDD
-0.3 ~ +6
V
Supply Voltage
AVIN to GND(Note 1)
VDD
2.2 ~ 5.5
V
Junction Temperature
TJ
+150
℃
Operation Temperature
TOPR
0 ~ +125
℃
Storage Temperature
TSTG
-40 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Thermal Resistance Junction-Ambient
θJA
150
℃
/W
ELECTRICAL CHARACTERISTICS
(TJ=25°C, VIN=AVIN=PVIN=2.5V, VDDQ=2.5V, unless otherwise specified).
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VREF Voltage
VREF
VIN = VDDQ = 2.3V
VIN = VDDQ = 2.5V
VIN = VDDQ = 2.7V
1.130
1.235
1.335
1.158
1.258
1.358
1.185
1.285
1.385
V
IOUT = 0A
VIN = VDDQ = 2.3V
VIN = VDDQ = 2.5V
VIN = VDDQ = 2.7V
1.125
1.225
1.325
1.159
1.259
1.359
1.190
1.290
1.390
VTT Output Voltage
IOUT = ±1.5A
VTT
VIN = VDDQ = 2.3V
VIN = VDDQ = 2.5V
VIN = VDDQ = 2.7V
1.125
1.225
1.325
1.159
1.259
1.359
1.190
1.290
1.390
V
High
VIH
1.9
Minimum Shutdown Level
Low
VIL
0.8
V
VTT Output Voltage Offset (VREF - VTT)
VosTT
VTT
IOUT = 0A
IOUT = -1.5A
IOUT = +1.5A
-20
-25
-25
0
0
0
20
25
25
mV
Quiescent Current
IQ
IOUT = 0A
320
500
µA
Quiescent Current in Shutdown
ISD
SD = 0V
115
150
µA
Shutdown Leakage Current
IQ_SD
SD = 0V
2
5
µA
VTT Leakage Current in Shutdown
IV
SD = 0V
VTT = 1.25V
1
10
µA
VSENSE Input Current
ISENSE
13
nA
VREF Output Impedance
ZVREF
IREF = -30 ~ +30 µA
2.5
kΩ
VDDQ Input Impedance
ZVDDQ
100
kΩ
Thermal Shutdown
TSD
165
℃
Thermal Shutdown Hysteresis
TSD-HYS
10
℃



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