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PIC16F720-E/ML bảng dữ liệu(PDF) 193 Page - Microchip Technology |
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PIC16F720-E/ML bảng dữ liệu(HTML) 193 Page - Microchip Technology |
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193 / 244 page ![]() 2010 Microchip Technology Inc. DS41430A-page 193 PIC16F/LF720/721 Voltage on MCLR/VPP during Erase/Program 8.0 — 9.0 V Temperature during programming: 10°C TA 40°C D132 VPEW VDD for Write or Row Erase 2 2 — — 5.5 3.6 V V PIC16F720/21 PIC16LF720/21 IPPPGM* Current on MCLR/VPP during Erase/Write —— 5.0 mA Temperature during programming: 10°C TA 40°C IDDPGM* Current on VDD during Erase/ Write — 5.0 mA Temperature during programming: 10°C TA 40°C D133 TPEW Erase/Write cycle time — 2.8 ms Temperature during programming: 10°C TA 40°C D134* TRETD Characteristic Retention 40 — — Year Provided no other specifications are violated 23.4 DC Characteristics: PIC16F/LF720/721-I/E (Continued) DC CHARACTERISTICS Standard Operating Conditions (unless otherwise stated) Operating temperature -40°C TA +85°C for industrial -40°C TA +125°C for extended Param No. Sym. Characteristic Min. Typ† Max. Units Conditions Legend: TBD = To Be Determined * These parameters are characterized but not tested. † Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested. Note 1: Negative current is defined as current sourced by the pin. 2: The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified levels represent normal operating conditions. Higher leakage current may be measured at different input voltages. 3: Including OSC2 in CLKOUT mode. |
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