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TPD2E009 bảng dữ liệu(PDF) 3 Page - Texas Instruments |
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TPD2E009 bảng dữ liệu(HTML) 3 Page - Texas Instruments |
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3 / 15 page ![]() ABSOLUTE MAXIMUM RATINGS (1) ELECTRICAL CHARACTERISTICS TPD2E009 www.ti.com.............................................................................................................................................................. SLVS953A – JUNE 2009 – REVISED JUNE 2009 over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT IO voltage tolerance D+, D– pins 0 6 TA Operating free-air temperature range –40 85 °C Tstg Storage temperature range –65 125 °C IEC 61000-4-2 Contact Discharge D+, D– pins ±8 kV ESD protection IEC 61000-4-2 Air-Gap Discharge D+, D– pins ±8 kV Peak pulse current (tp = 8/20 µs) D+, D– pins 5 A Peak pulse power (tp = 8/20 µs) D+, D– pins 45 W (1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum-rated conditions for extended periods may affect device reliability. over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VRWM Reverse stand-off voltage D+,D– pins to ground 5.5 V Vclamp Clamp voltage D+,D– pins to ground, IIO = 1 A 8 V IIO Current from IO port to supply pins VIO = 2.5 V, ID = 8 mA 0.01 0.1 µA D+,D– pins, VIO = 2.5 V, ID = 8 mA 0.6 0.8 0.95 lower clamp diode, VD Diode forward voltage V D+,D– pins, upper clamp diode, VCC = 0 V, ID = –8 mA 0.6 0.8 0.95 DRY package Rdyn Dynamic resistance D+,D– pins, I = 1 A 1 Ω D+,D– pins, DBZ VIO = 2.5 V 0.9 pF Package CIO IO capacitance D+,D– pins, DRT VIO = 2.5 V 0.7 pF Package VBR Break-down voltage IIO = 1 mA 7 V Copyright © 2009, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s): TPD2E009 |
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