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TPD2E009 bảng dữ liệu(PDF) 3 Page - Texas Instruments

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Giải thích chi tiết về linh kiện  2-CHANNEL ESD SOLUTION FOR HIGH-SPEED (6 GBPS) DIFFERENTIAL INTERFACE
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TPD2E009 bảng dữ liệu(HTML) 3 Page - Texas Instruments

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ABSOLUTE MAXIMUM RATINGS
(1)
ELECTRICAL CHARACTERISTICS
TPD2E009
www.ti.com.............................................................................................................................................................. SLVS953A – JUNE 2009 – REVISED JUNE 2009
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
IO voltage tolerance
D+, D– pins
0
6
TA
Operating free-air temperature range
–40
85
°C
Tstg
Storage temperature range
–65
125
°C
IEC 61000-4-2 Contact Discharge
D+, D– pins
±8
kV
ESD protection
IEC 61000-4-2 Air-Gap Discharge
D+, D– pins
±8
kV
Peak pulse current (tp = 8/20 µs)
D+, D– pins
5
A
Peak pulse power (tp = 8/20 µs)
D+, D– pins
45
W
(1)
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the
specifications is not implied. Exposure to absolute maximum-rated conditions for extended periods may affect device reliability.
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VRWM
Reverse stand-off voltage
D+,D– pins to ground
5.5
V
Vclamp
Clamp voltage
D+,D– pins to ground,
IIO = 1 A
8
V
IIO
Current from IO port to supply pins
VIO = 2.5 V, ID = 8 mA
0.01
0.1
µA
D+,D– pins,
VIO = 2.5 V, ID = 8 mA
0.6
0.8
0.95
lower clamp diode,
VD
Diode forward voltage
V
D+,D– pins,
upper clamp diode,
VCC = 0 V, ID = –8 mA
0.6
0.8
0.95
DRY package
Rdyn
Dynamic resistance
D+,D– pins,
I = 1 A
1
Ω
D+,D– pins, DBZ
VIO = 2.5 V
0.9
pF
Package
CIO
IO capacitance
D+,D– pins, DRT
VIO = 2.5 V
0.7
pF
Package
VBR
Break-down voltage
IIO = 1 mA
7
V
Copyright © 2009, Texas Instruments Incorporated
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