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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
RF IN
2
GND1
3
PD
GND2
4
5
RF OUT
RF2365
3V LOW NOISE AMPLIFIER
• DCS GSM
• PCS CDMA
•PCS TDMA
• 2.4GHz Systems
• General Purpose Amplification
• Commercial and Consumer Systems
The RF2365 is a low noise amplifier with a high dynamic
range designed for the receive front end of digital cellular
applications at PCS/DCS frequencies. It is designed to
amplify low level signals with minimum noise contribution
while operating in the harsh, interference-rich environ-
ments of newly deployed digital subscriber units. The part
provides excellent performance as a LNA for 2.4GHz
radio applications. The IC is featured in a standard
SOT 5-lead plastic package.
• 1.6dB Noise Figure @ 1850MHz
• 1.75dB Noise Figure @ 2450MHz
• 18.0dB Gain at PCS/DCS
• 15.5dB Gain at 2.45GHz
• External Bias Control
• Extremely Small SOT23-5 Package
RF2365
3V Low Noise Amplifier
RF2365 PCBA
Fully Assembled Evaluation Board
4
Rev A4 001201
1
1.60
+ 0.01
0.400
2.80
+ 0.20
2.90
+ 0.10
0.45
+ 0.10
3° MAX
0° MIN
0.127
0.15
0.05
1.44
1.04
Dimensions in mm.
0.950
Package Style: SOT 5-Lead
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