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Preliminary
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
8
7
6
5
EN1
RF OUT2
GND
RF OUT1
EN2
RF IN2
GND
RF IN1
RF2363
DUAL-BAND 3V LOW NOISE AMPLIFIER
• GSM/DCS Dual-Band Handsets
• Cellular/PCS Dual-Band Handsets
• General Purpose Amplification
• Commercial and Consumer Systems
The RF2363 is a dual-band Low Noise Amplifier
designed for use as a front-end for 950 MHz GSM/
1850 MHz DCS applications and may be used for dual-
band cellular/PCS applications. The 900MHz LNA is a
single-stage amplifier; the 1900MHz LNA is a 2-stage
amplifier. The part may also be tuned for applications in
other frequency bands. The device has an excellent com-
bination of low noise figure and high linearity at a very low
supply current. It is packaged in a very small industry
standard SOT 8-lead plastic package.
• Low Noise and High Intercept Point
•18dB Gain at 900MHz
•21dB Gain at 1900MHz
• Low Supply Current
• Single 2.5V to 5.0V Power Supply
• Very Small SOT-23-8 Plastic Package
RF2363
Dual-Band 3V Low Noise Amplifier
RF2363 PCBA
Fully Assembled Evaluation Board
4
Rev B2 010129
0.127
3°MAX
0°MIN
0.55
0.35
0.365
1.59
1.61
3.00
2.60
3.00
2.80
0.650
0.15
0.05
1.44
1.04
*When Pin 1 is in upper
left, text reads downward
(as shown).
Package Style: SOT, 8-Lead
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