NTMFS4841NH datasheet(1/7 Pages) ONSEMI

tên linh kiện	NTMFS4841NH

Giải thích chi tiết về linh kiện	Power MOSFET 30 V, 59 A, Single N?묬hannel, SO??FL

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nhà sản xuất	ONSEMI [ON Semiconductor]

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May, 2010 − Rev. 4

1

Publication Order Number:

NTMFS4841NH/D

NTMFS4841NH

Power MOSFET

30 V, 59 A, Single N−Channel, SO−8FL

Features

• Low RDS(on) to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• Low RG

• These are Pb−Free Devices*

Applications

• Refer to Application Note AND8195/D

• CPU Power Delivery

• DC−DC Converters

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Sym-

bol

Value

Unit

Drain−to−Source Voltage

VDSS

30

V

Gate−to−Source Voltage

VGS

±20

V

Continuous Drain

Current RqJA

(Note 1)

Steady

State

TA = 25°C

TA = 85°C

ID

13.5

9.7

A

Power Dissipation

RqJA (Note 1)

TA = 25°C

TA = 85°C

PD

2.16

1.1

W

Continuous Drain

Current RqJA

v10 s

TA = 25°C

TA = 85°C

ID

21.8

15.7

A

Power Dissipation

RqJA v10 s

TA = 25°C

TA = 85°C

PD

5.7

2.9

W

Continuous Drain

Current RqJA

(Note 2)

TA = 25°C

TA = 85°C

ID

8.6

6.2

A

Power Dissipation

RqJA (Note 2)

TA = 25°C

TA = 85°C

PD

0.87

0.45

W

Continuous Drain

Current RqJC

(Note 1)

TC = 25°C

TC = 85°C

ID

59

42.5

A

Power Dissipation

RqJC (Note 1)

TC = 25°C

TC = 85°C

PD

41.7

21.7

W

Pulsed Drain

Current

tp =

10 ms

TA = 25°C

IDM

177

A

Operating Junction and Storage Temperature

TJ,

TSTG

−55 to

+150

°C

Source Current (Body Diode)

IS

35

A

Drain to Source dV/dt

dV/dt

6

V/ns

Single Pulse Drain−to−Source Avalanche

Energy (VDD = 24 V, VGS = 10 V, IL = 25.6 A,

L = 0.3 mH, RG = 25 W)

EAS

98

mJ

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

MARKING

DIAGRAM

http://onsemi.com

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

4841NH

AYWWG

G

1

V(BR)DSS

RDS(ON) MAX

ID MAX

30 V

7.0 mW @ 10 V

59 A

11.6 mW @ 4.5 V

G (4)

S (1,2,3)

N−CHANNEL MOSFET

D (5,6)

Device

Package

Shipping†

ORDERING INFORMATION

NTMFS4841NHT1G

SO−8FL

(Pb−Free)

1500 /

Tape & Reel

NTMFS4841NHT3G

SO−8FL

(Pb−Free)

5000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

S

G

D

(Note: Microdot may be in either location)

*For additional information on our Pb−Free strategy

and soldering details, please download the

ON Semiconductor Soldering and Mounting Tech-

niques Reference Manual, SOLDERRM/D.

Số phần tương tự - NTMFS4841NH

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
ON Semiconductor	NTMFS4841N	151Kb / 7P	Power MOSFET 30 V, 57 A, Single N?묬hannel, SO??FL May, 2010 ??Rev. 7
	NTMFS4841N	125Kb / 7P	Power MOSFET 30V 57A Single N-Channel, SO-8FL May, 2012 ??Rev. 8
	NTMFS4841NT1G	151Kb / 7P	Power MOSFET 30 V, 57 A, Single N?묬hannel, SO??FL May, 2010 ??Rev. 7
	NTMFS4841NT1G	125Kb / 7P	Power MOSFET 30V 57A Single N-Channel, SO-8FL May, 2012 ??Rev. 8
	NTMFS4841NT3G	151Kb / 7P	Power MOSFET 30 V, 57 A, Single N?묬hannel, SO??FL May, 2010 ??Rev. 7

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Mô tả tương tự - NTMFS4841NH

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
ON Semiconductor	NTMFS4852N	141Kb / 7P	Power MOSFET 30 V, 155 A, Single N?묬hannel, SO?? FL July, 2009 ??Rev. P1
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