NTMFS4841N datasheet(3/7 Pages) ONSEMI

tên linh kiện	NTMFS4841N

Giải thích chi tiết về linh kiện	Power MOSFET 30 V, 57 A, Single N?묬hannel, SO??FL

PDF	7 Pages

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nhà sản xuất	ONSEMI [ON Semiconductor]

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NTMFS4841N

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Unit

Max

Typ

Min

Test Condition

Symbol

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

td(ON)

VGS = 11.5 V, VDS = 15 V,

ID = 15 A, RG = 3.0 W

8.1

Rise Time

24.2

Turn−Off Delay Time

td(OFF)

22.8

Fall Time

5.7

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 30 A

TJ = 25°C

0.9

1.2

TJ = 125°C

0.8

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 30 A

20.5

Charge Time

11.6

Discharge Time

8.9

Reverse Recovery Charge

QRR

10.7

PACKAGE PARASITIC VALUES

Source Inductance

TA = 25°C

0.93

Drain Inductance

0.005

Gate Inductance

1.84

Gate Resistance

3.2

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

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