NTJS3157NT2 datasheet(3/6 Pages) ONSEMI

tên linh kiện	NTJS3157NT2

Giải thích chi tiết về linh kiện	Trench Power MOSFET 20 V, 4.0 A, Single N?묬hannel, SC??8

PDF	6 Pages

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nhà sản xuất	ONSEMI [ON Semiconductor]

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NTJS3157N

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TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

0.5

Figure 2. Transfer Characteristics

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

0.1

0.05

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

−50

−25

1.4

1.2

0.8

0.6

125

100

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

TJ = 25°C

0.25

150

ID = 4.0 A

VGS = 4.5 V

25°C

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

8 V

VDS ≥ 10 V

0.15

1.5

ID = 4 A

TJ = 25°C

0.03

0.05

0.04

ID, DRAIN CURRENT (AMPS)

0.06

VGS = 2.5 V

TJ = 25°C

0.2

1.8

1.6

VGS = 4.5 V

1000

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

220

10000

VGS = 0 V

TJ = 100°C

100

TJ = 150°C

VGS = 1.8 V

4 V

1.6 V

1.2 V

1.4 V

TJ = −55°C

TJ = 125°C

0.07

0.09

0.08

0.1

VGS = 1.8 V

2 V

1 V

0.8 V

2.5

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