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DB1012S bảng dữ liệu(PDF) 1 Page - Rectron Semiconductor |
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DB1012S bảng dữ liệu(HTML) 1 Page - Rectron Semiconductor |
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1 / 2 page ![]() SINGLE-PHASE GLASS PASSIVATED VOLTAGE 1200 Volts CURRENT 1.0 Ampere RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION FEATURES * Surge overload rating - 50 amperes peak * Ideal for printed circuit board * Reliable low cost construction utilizing molded * Glass passivated device * Polarity symbols molded on body * Mounting position: Any * Weight: 1.0 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. DB1012S MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) ELECTRICAL CHARACTERISTICS (At TA = 25 oC unless otherwise noted) SILICON BRIDGE RECTIFIER NOTE: Suffix “-s” Surface Mount for Dip Bridge. Dimensions in inches and (millimeters) DB-S 1998-8 RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Bridge Input Voltage Maximum DC Blocking Voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Operating and Storage Temperature Range SYMBOL VRRM VDC IO IFSM TJ,TSTG VRMS Volts Volts Amps 1.0 50 -55 to + 150 0 C UNITS Maximum Average Forward Output Current at TA = 40 oC 1200 840 Volts Amps DB1012S 1200 DC Blocking Voltage per element CHARACTERISTICS VF SYMBOL IR UNITS 1.1 0.5 mAmps uAmps Element at 1.0A DC Maximum Forward Voltage Drop per Bridge Volts @TA = 25 oC @TA = 125 oC 5.0 Maximum Reverse Current at rated DB1012S MECHANICAL DATA: * Epoxy : UL flammability classification 94V-0 .255 (6.5) .310 (7.9) .290 (7.4) .245 (6.2) .042 (1.1) .038 (1.0) .013 (.330) .009 .003 (.076) .410 (10.4) .060 (1.524) .040 (1.016) .360 (9.4) (9.4) .335 (8.51) .320 (8.13) .195 (5.0) .205 (5.2) .135 (3.4) .115 (2.9) |
Số phần tương tự - DB1012S |
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Mô tả tương tự - DB1012S |
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