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RG4J bảng dữ liệu(PDF) 1 Page - Gulf Semiconductor |
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RG4J bảng dữ liệu(HTML) 1 Page - Gulf Semiconductor |
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1 / 2 page ![]() Rev.A1 www.gulfsemi.com RG4J SINTERED GLASS JUNCTION FAST AVALANCHE RECTIFIER VOLTAGE: : : :600V CURRENT: 3.0A FEATURE G-4 Glass passivated Hermetically sealed package Low reverse current Soft recovery characteristics MECHANICAL DATA Case: G-4 sintered glass case Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C Polarity: color band denotes cathode end Mounting position: any Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (single-phase, half-wave, 60HZ, resistive or inductive load rating at 25 °C, unless otherwise stated) SYMBOL RG4J units Maximum Recurrent Peak Reverse Voltage VRRM 600 V Maximum RMS Voltage VRMS 420 V Maximum DC blocking Voltage VDC 600 V Maximum Average Forward Rectified Current 3/8”lead length at Ta=55℃ IFAV 3.0 A Peak Forward Surge Current 8.3ms single half sine- wave superimposed on rated load IFSM 100 A Maximum Forward Voltage at rated Forward Current and 25℃ VF 1.3 V Maximum DC Reverse Current at VDC =600V and 25℃ IR 5.0 µA Maximum DC Reverse Current at VDC =650V and 25℃ IR 5.0 µA Maximum DC Reverse Current at VDC =700V and 25℃ IR 25.0 µA Maximum DC Reverse Current at VDC =600V and 100℃ IR 100 µA Maximum Reverse Recovery Time (Note 1) Trr 250 nS Typical Junction Capacitance (Note 2) Cj 50.0 pF Typical Thermal Resistance (Note 3) Rth(ja) 20.0 ℃ /W Storage and Operating Junction Temperature Tstg, Tj -65 to +175 ℃ Note: 1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A 2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc 3. Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted |
Số phần tương tự - RG4J |
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Mô tả tương tự - RG4J |
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