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MSRD620CTRG bảng dữ liệu(PDF) 2 Page - ON Semiconductor |
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MSRD620CTRG bảng dữ liệu(HTML) 2 Page - ON Semiconductor |
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2 / 5 page ![]() MSRD620CTRG http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 200 V Average Rectified Forward Current (At Rated VR, TC = 162°C) Per Leg Per Package IO 3.0 6.0 A Non−Repetitive Peak Surge Current Per Package (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) IFSM 45 A Storage / Operating Case Temperature Tstg, Tc −65 to +175 °C Operating Junction Temperature TJ −65 to +175 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Resistance − Junction−to−Case (Note 1) Per Leg RqJC 5.0 °C/W Thermal Resistance − Junction−to−Ambient (Note 1) Per Leg RqJA 60 °C/W Thermal Resistance − Junction−to−Ambient (Note 2) Per Leg RqJA 166 °C/W ELECTRICAL CHARACTERISTICS Rating Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3) Per Leg VF TJ = 25°C TJ = 125°C V (IF = 3.0 A) (IF = 6.0 A) 1.15 1.30 0.95 1.15 Maximum Instantaneous Reverse Current (Note 3) Per Leg IR TJ = 25°C TJ = 125°C mA (VR = 200 V) 1.0 200 Maximum Reverse Recovery Time (Note 4) Per Leg (VR = 30 V, IF = 1.0 A, di/dt = 50 A/ms) trr 75 ns 1. Mounted with 700 mm2 copper pad size (approximately 1 in2) 1 oz FR4 board. 2. Mounted with pad size approximately 46 mm2 copper, 1 oz FR4 board. 3. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%. 4. trr measured projecting from 25% of IRM to ground. |
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