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MBR2545CT bảng dữ liệu(PDF) 2 Page - ON Semiconductor |
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MBR2545CT bảng dữ liệu(HTML) 2 Page - ON Semiconductor |
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2 / 4 page ![]() MBR2535CT, MBR2545CT http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBR2535CT MBR2545CT VRRM VRWM VR 35 45 V Average Rectified Forward Current (Rated VR, TC = 160°C) IF(AV) 30 A Peak Repetitive Forward Current, per Diode Leg (Rated VR, Square Wave, 20 kHz, TC = 150°C) IFRM 30 A Non−Repetitive Peak Surge Current per Diode Leg (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms ESD Ratings: Machine Model = C ESD Ratings: Human Body Model = 3B ESD >400 >8000 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS (Per Leg) Characteristic Symbol Value Unit Thermal Resistance,− Junction−to−Case − Junction−to−Ambient (Note 2) RqJC RqJA 1.5 50 °C/W 2. When mounted using minimum recommended pad size on FR−4 board. ELECTRICAL CHARACTERISTICS (Per Diode) Symbol Characteristic Condition Min Typ Max Unit VF Instantaneous Forward Voltage (Note 3) IF = 15 Amp, TJ = 25°C IF = 15 Amp, TJ = 125°C IF = 30 Amp, TJ = 25°C IF = 30 Amp, TJ = 125°C − − − − − 0.50 − 0.65 0.62 0.57 0.82 0.72 V IR Instantaneous Reverse Current (Note 3) Rated dc Voltage, TJ = 25°C Rated dc Voltage, TJ = 125°C − − − 9.0 0.2 25 mA 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. |
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