ISO7520

ISO7521

SLLSE39 – JUNE 2010

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

DEVICE FUNCTION TABLE

H

H

PU

PU

L

L

Open

H

PD

PU

X

H

(1)

PU = Powered Up (Vcc

≥ 3.15V); PD = Powered Down (Vcc ≤ 2.4V); X = Irrelevant; H = High Level; L

= Low Level

AVAILABLE OPTIONS

PRODUCT

MARKED AS

ORDERING NUMBER

ISO7520CDW (rail)

ISO7520C

–40°C to 105°C

ISO7520CDW

ISO7520CDWR (reel)

ISO7521CDW (rail)

ISO7521C

–40°C to 105°C

ISO7521CDW

ISO7521CDWR (reel)

ABSOLUTE MAXIMUM RATINGS

(1)

VALUE

UNIT

–0.5 V to 6

V

Voltage at IN, OUT

–0.5 V to 6

V

Output Current

±15

mA

JEDEC Standard 22, Test Method

Human Body Model

±4

kV

A114-C.01

Electrostatic

ESD

Field-Induced-Charged Device

All pins

discharge

JEDEC Standard 22, Test Method C101

±1

kV

Model

Machine Model

ANSI/ESDS5.2-1996

±200

V

Maximum junction temperature

150

°C

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values except differential I/O bus voltages are with respect to network ground terminal and are peak voltage values.

2

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