LTC4360ISC8-2TRMPBF datasheet(5/12 Pages) LINER

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LTC4360-1/LTC4360-2

436012f

PIN FUNCTIONS

GATE: Gate Drive for External N-Channel MOSFET. An

internal charge pump provides a 10μA pull-up current

to charge the gate of the external N-channel MOSFET. An

additional ramp circuit limits the GATE ramp rate when

turning on to 3V/ms. For slower ramp rates, connect an

external capacitor from GATE to GND. An internal clamp

limits GATE to 6V above the OUT pin voltage. An internal

GATE high comparator controls the PWRGD pin.

GATEP (LTC4360-2): Gate Drive for External P-Channel

MOSFET. GATEP connects to the gate of an optional external

P-channel MOSFET to protect against negative voltages

at IN. This pin is internally clamped to 5.8V below VIN. An

internal 2M resistor connects this pin to ground. Connect

to IN if not used.

GND: Device Ground.

IN: Supply Voltage Input. Connect this pin to the input

power supply. This pin has an overvoltage threshold of

5.8V. After an overvoltage event, this pin must fall below

VIN(OV) – ΔVOV to release the overvoltage lockout. Dur-

ing lockout, GATE is held low and the PWRGD pull-down

releases.

ON (LTC4360-1): On Control Input. A logic low at ON

enables the LTC4360-1. A logic high at ON activates a

low current pull-down at the GATE pin and causes the

LTC4360-1 to enter a low current sleep mode. An internal

5μA current pulls ON down to ground. Connect to ground

or leave open if unused.

OUT: Output Voltage Sense Input for Gate Clamp. Connect

to the source of the external N-channel MOSFET to sense

the output voltage for GATE to OUT clamp.

PWRGD: Power Good Status. Open-drain output with

internal 500k resistive pull-up to OUT. Pulls low 65ms

after GATE ramps above VGATE(TH).

BLOCK DIAGRAM

–

5.8V

5.7V

GND

436012 BD

10μA

5μA

(LTC4360-1)

OUT

PWRGD

5.8V

VGATE(TH)

500k

1.8M

200k

5.8V

GATEP

(LTC4360-2)

GATE

CONTROL

CHARGE

PUMP

OVERVOLTAGE

COMPARATOR

GATE HIGH

COMPARATOR

–

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