ZXRE125DF datasheet(2/4 Pages) ZETEX

2 / 4 page

ABSOLUTE MAXIMUM RATINGS

Reverse Current

30mA

Forward Current

10mA

Operating temperature.

-40 to 85°C

Storage temperature.

-55 to 125°C

Power Dissipation (Tamb=25°C)

SOT23

330mW

SO8

625mW

E-Line

500mW

ELECTRICAL CHARACTERISTICS

TEST CONDITIONS (Unless otherwise stated) Tamb=25°C

SYMBOL

PARAMETER

CONDITIONS

LIMITS

TOL. %

UNITS

MIN

TYP

MAX

Reverse Breakdown Voltage

R=100µA

1.214

1.208

1.196

1.183

1.22

1.226

1.232

1.244

1.257

0.5 ‡

IMIN

Minimum Knee Current

µA

Recommended Operating

Current Range

0.03

TC †

Average Reverse Breakdown

Voltage Temperature

Coefficient

IR(min) to

IR(max)

ppm/°C

∆V

∆I

Reverse Breakdown Voltage

change with Current

IR=30µA to 1mA

IR=1mA to 5mA

Reverse Dynamic Impedance

IR =1mA

f =100Hz

IAC=0.1 IR

0.2

0.6

Ω

Wideband Noise Voltage

IR=8µA to

100

µA

f=10Hz to 10kHz

µV(rms)

†

TC =

(max )−VR ( min )) x 1000000

VR x (T(max )−T(min ))

Note: VR(max) - VR(min) is the

maximum deviation in reference

voltage measured over the full

operating temperature range.

‡ Note: 0.5% SOT23 only.

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Reverse Voltage (V)

Reverse Characteristics

TA=-40c TO +85C

ZXRE125

ISSUE 4 - JANUARY 2002

ZXRE125DF bảng dữ liệu(PDF) 2 Page - Zetex Semiconductors

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